VSF706C1 visible light emitting diode ?@ anode ?a cathode features high-output power compact high reliability applications optical switches optical sensors medical application 1. absolute maximum ratings (ta=25??) symbol unit if ma ifp a vr v pd mw topr ?? tstg ?? tj ?? tls ?? *2:time 5 sec max,position:up to 3mm from the body i t e m forward current (dc) forward current (pulse)*1 reverse voltage power dissipation operating temp. storage temp. junction temp. 5 120 -20 to 85 -30 to 100 ratings dimensions (unit:mm) 50 0.5 100 260 lead soldering temp.*2 *1:tw=10us,t=10ms spectral output 0 20 40 60 80 100 120 650 700 750 wavelength(nm) relative power output(%) to purchase this part contact marktech optoelectronics at 800.984.5337 optoelectronics www.marktechopto.com marktech
VSF706C1 visible light emitting diode 2.electrical & optical characteristics (ta=25 ?? ) symbol min typ max unit po 4.0 mw vf 1.8 2.3 v ir 100 ? a ? p 700 nm ?? 25 nm ?? 25 deg. tr ?| ns tf ?| ns cj 35 pf p/t -0.6 %/ ?? v/t -1.9 mv/ ?? if=10ma temp. coefficient of po reverse current peak wavelength spectral line half width half intensity beam angle rise time fall time junction capacitance ifp=20ma i t e m power output forward voltage temp. coefficient of vf if=10ma vr=5v if=20ma if=20ma if=20ma 1mhz ,v=0v conditions if=20ma if=20ma ifp=20ma thermal derating curve 0 10 20 30 40 50 60 -30 0 30 60 90 ambient temperature(??) forward current(ma) forward i-v characteristics 0 10 20 30 40 50 60 0 1 2 3 forward voltage(v) forward current(ma) power output vs temperature if=10ma 0 20 40 60 80 100 120 140 -30 0 30 60 90 ambient temperature(??) relative power output(%) 750 radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 100 200 300 0 10 20 30 40 50 60 forward current(ma) relative power output(%) forward voltage vs temperature if=10ma 0 0.5 1 1.5 2 2.5 3 -30 0 30 60 90 ambient temperature(??) forward voltage(v)
|
